|
| Al | ZnO | NbOx |
| Substrate | Glass | Al/glass | Al/glass, quartz glass |
| Target | ϕ101.6 mm, Al (99.9%) | ϕ50 mm, Zn (99.99%) | ϕ50 mm, Nb (99.99%) |
| Ar gas | 99.99%, 1.0 ccm | 99.99%, 1.8 ccm | 99.99%, 6.0 ccm |
| O2 gas | - | 99.99%, 2.4 ccm | 99.99%, 6.0 ccm |
| Orbital speed of substrate holders | 1800 rpm | - | - |
| Distance from substrate to target | 100 mm | 60 mm | 60 mm |
| RF power, and frequency | 50 W, 13.56 MHz | 200 W, 13.56 MHz | 200 W, 13.56 MHz |
| Back pressure | <8.0 × 10−5 Pa | <6.7 × 10−4 Pa | <6.7 × 10−4 Pa |
| Deposition pressure | 9.3 × 10−2 Pa | 0.39 Pa | 0.39 Pa |
| Deposition rate | 0.042 nm/s | 1 nm/s | 0.17 nm/s |
| Deposition time | 2400 s | 3, 17 s | 10 - 300 s |