| Chemical etching method | Electrochemical plating method | SEI | SEPC | EBIC | ||||
| Junction delineation type | Metallurgical | electrical | ||||||
| Delineation display | Highlight etched n doped region | Highlight n doped regions covered by Cu | Delimitation of the metallurgical junction | Highlight p doped regions in bright and n doped regions in dark | Space charge region mapping | |||
| Spatial delineation range | HIGH | HIGH | HIGH | LOW (because of SEM imaging) | LOW (because of SEM imaging + probe positioning) | |||
| Applicable on multiple junctions design | YES | YES | LIMITED multiple probing configurations required | YES | LIMITED multiple probing configurations required | |||
| Require preliminary sample design informations | NO | NO | YES for probe positioning | NO | YES for probe positioning | |||
| Spatial resolution | LOW | LOW | LOW | HIGH | LOW | |||
| Applicable on short junction (1 µm depth) characterization | LIMITED | NO (large size of the Cu particles) | NO (due to probing) | YES | NO (due to probing) | |||
| Junction nature determination | Limited (highly dependent on etching duration) | YES (Cu deposition on n doped areas) | YES | YES | YES | |||
| Isotype delineation | LIMITED (1) | n+ = thicker Cu deposition | NO | LIMITED (2) | NO | |||
| Other available information(s) | NO | NO | NO | Quantitative approach yet reported | SCR mapping under polarization; diffusion length determination… | |||
| Sensitivity to the experimental set up | HIGH | MEDIUM | LOW | LOW | LOW | |||
| Sensitivity to the polishing quality | LOW | LOW | MEDIUM | MEDIUM | HIGH | |||
| Destructive method on the studied CS | YES | YES | NO | NO | NO | |||
| Require Expensive tool | NO | NO | YES | YES | YES | |||
| Require specific tool except SEM | NO Common chemical solutions | YES | NO | YES Probing + EBIC ampli | ||||
| Easy to implement | YES | YES | YES | YES | NO | |||
| Safety constraint level | HIGH | HIGH | LOW | LOW | LOW | |||