VGS

0.60 V

VDS

0.60 V

VTO

0.20 V

Source/drain doping concentration (ND)

1 × 1020 cm−3

Channel body acceptor impurity concentration (NA)

1 × 1016 cm−3

Channel width (W)

125 nm

Channel length (L)

10 nm

Source length/drain length (LSD)

7.5 nm

Silicon channel thickness (TSi)

1.5 nm

Top/bottom oxide insulator thickness (TOX)

1.5 nm

Top/bottom insulator relative dielectric constant

3.9

Channel body relative dielectric constant

11.7

Top/bottom gate contact work function

4.1888 eV