| Properties | Material | |
| Silicon | 4H-Silicon Carbide | |
| Band gap energy (eV) | 1.1 | 3.260 |
| Max. electric field (MV/m) | 41.0 | 300.000 |
| Electron mobility (m2/V sec) | 0.145 | 0.090 |
| Hole mobility (m2/V sec) | 0.0480 | 0.012 |
| Saturation velocity (105 m/sec) | 0.86 | 2.000 |
| Thermal conductivity (W/m K) | 150.00 | 500.000 |