Layers properties

CIGSe

ZnS

Thickness (μm)

3

0.03

Band gap Eg (eV)

1.19

3.6

Electron affinity χ (eV)

4.5

4.2

Doping level (cm−3)

5 × 1017 (a)

1018 (d)

Band offsets

CIGSe/ZnS

EC (eV)

0.3

EV (eV)

−2.11

η (%)

VOC (mV)

JSC (mA/cm2)

FF (%)

26

824.1

36.9

85.5