| Set | Process | Deposit | Plate (µm) | Time (h) | T (˚C) | Final state | |
| Alloy | Thickness (µm) | ||||||
| LH-108 | Sputtering | Al | 0.150 | 330 | ----- | ----- | ----- |
| LHC-110 | Sputtering | Al | 0.300 | 330 | ----- | ----- | ----- |
| TL-01 | TLPB | Al-Si | 313 | 440 | 2 | 590 | Bonded |
| TL-02 | TLPB | Al-Si | 289 | 440 | 2 | 600 | Bonded |
| TL-03 | TLPB | Al-Si | 321 | 433 | 6 | 590 | Partially bonded |
| TL-04 | TLPB | Al-Si | 316 | 433 | 6 | 590 | Not bonded |
| TL-05 | TLPB | Al-Si | 314 | 478 | ----- | 570 | ----- |
| TL-06 | TLPB | Al-Si | 312 | 478 | ----- | 570 | ----- |