| Parameters | CuSbS2 [17] | CZTS [18] | CdS [19] | i-ZnO [20] | ZnO: Al [20] |
| Thickness (nm) | 50 - 500 | 100 - 3000 | 50 - 500 | 50 | 200 |
| Band gap (eV) | 1.58 | 1.4 | 2.4 | 3.3 | 3.3 |
| Electron affinity (eV) | 4.2 | 4.4 | 4.2 | 4.4 | 4.6 |
| Dielectric permittivity (єr) | 14.6 | 10 | 10 | 7.8 | 7.8 |
| CB effective DOS (cm−3) | 2.0 × 1018 | 2.2 × 1018 | 2.2 × 1018 | 2.2 × 1018 | 2.2 × 1018 |
| VB effective DOS (cm−3) | 1.0 × 1018 | 1.8 × 1019 | 1.8 × 1019 | 1.8 × 1019 | 1.8 × 1019 |
| Electron mobility (cm2∙Vs−1) | 49 | 100 | 100 | 160 | 160 |
| Hole mobility (cm2∙Vs−1) | 49 | 25 | 25 | 40 | 40 |
| Donor density (cm−3) | 0 | 0 | 1 × 1012 - 1 × 1018 | 1 × 1015 | 1 × 1020 |
| Acceptor density (cm−3) | 1 × 1012 - 1 × 1018 | 1 × 1012 - 1 × 1018 | 0 | 0 | 0 |
| Defect density (cm−3) | 1 × 1014 | 1 × 1014 | 1 × 1014 | 1 × 1014 | 1 × 1014 |