| [Sputtering] |
|
| Target | Si3N4 |
| RF Power | 500/700 W |
| Target-Substrate Distance | 85 mm |
| [PBII] |
|
| Pulse Frequency | 1.0 kHz |
| DC Pulse Bias | −5.0 kV (Width: 5 μs, Delay: 25 μs) |
| Pulse RF Power | 300 W (Width: 50 μs, Delay: 25 ns) |
| Ar Gas Flow Rate | 30 sccm |
| CH4 Gas Flow Rate | 10, 15, 20 sccm |
| Deposition Time | 120 min |