Parameter

T = 100 K

T = 300 K

Resistivity r [8]

48 mΩ∙cm

145 mΩ∙cm

Conductivity

2.08 × 104 Ω−1∙cm−1

0.69 × 104 Ω−1∙cm−1

Diffusion coefficient D (Equation (5))

38.6* cm2/s

13.2* cm2/s

Drift mobility mdrift1 (Equation (6))

4176*

464*

Hall mobility mH1 (Equation (7))

138* cm2/V∙s

46* cm2/V∙s

Scattering time tF (Equation (10))

7.8 × 10−14* s

2.6 × 10−14* s

Effective density neff of randomly moving charge carriers (Equation (4))

3.1 × 1019 cm−3

9.3 × 1019 cm−3

Free path length

28* nm

9.6* nm

Electron heat capacity coefficient γ [9]

4.5 mJ/(mol∙K2)

Total density of states geff(EF) at Fermi surface (from γ [9] )

3.63 × 1021 eV−1∙cm−3

Fermi energy

0.39 eV

Plasma frequency (Equation (9))

1.15 eV

Effective mass of randomly moving electron or hole

m0 = 9.1 × 10−31 kg

Fermi velocity

3.85 × 107 cm/s

Hall coefficient RH1 (Equation (8))

6.6 × 103 cm3/C