Layers properties

i-Zno

CdS

SDL

CIGS

Thickness (nm)

300

50

15

2500

Band gap (eV)

3.3

2.4

1.3

1.25

Electron Affinity (eV)

4.55

Variable

Variable

Variable

Diélectric relative Permittivity

9.00

10

13.6

13.6

Effective densité of state in BC (cm⁻³)

$3.1\ast {10}^{18}$

$3.1\ast {10}^{18}$

$2\ast {10}^{18}$

$2\ast {10}^{18}$

Effective densité of state in BV (cm⁻³)

$1.8\ast {10}^{19}$

$3.1\ast {10}^{18}$

$1.5\ast {10}^{19}$

$1.5\ast {10}^{19}$

Electrons thermal velocity (cm/s)

$2.4\ast {10}^7$

$3.1\ast {10}^7$

$3.9\ast {10}^7$

$3.9\ast {10}^7$

Holes thermal velocity (cm/s)

$1.3\ast {10}^7$

$1.6\ast {10}^7$

$1.4\ast {10}^7$

$1.4\ast {10}^7$

Electrons Mobility (cm²/Vs)

100

72

10

100

Holes Mobility (cm²/Vs)

31

20

1.25

12.5

Doping concentration (cm⁻³)

$1\ast {10}^{17}\left(D\right)$

$5\ast {10}^{17}\left(D\right)$

$1\ast {10}^{13}\left(D\right)$

$1\ast {10}^{16}\left(A\right)$

Bulk defect properties

Bulk defect Density (cm⁻³)

$1\ast {10}^{16}$

$5\ast {10}^{16}$

$1\ast {10}^{14}$

$1\ast {10}^{14}$

Capture cross-section electrons (cm²)

$1\ast {10}^{-15}$

$1\ast {10}^{-15}$

$5\ast {10}^{-13}$

Variable

Capture cross-section holes (cm²)

$5\ast {10}^{-13}$

$5\ast {10}^{-13}$

$5\ast {10}^{-15}$

$5\ast {10}^{-15}$

Interface Properties

CdS/SDL

SDL/CIGS

Interface defect density (cm⁻²)

Variable

Variable

Capture cross-section electrons (cm²)

$1\ast {10}^{-15}$

$1\ast {10}^{-15}$

Capture cross-section holes (cm²)

$1\ast {10}^{-15}$

$1\ast {10}^{-15}$