| Ba-compounds | HA |
Substrate temperature [˚C] | 720 | |
Pulse repetition rate of ablation laser [Hz] | 2 | 5 |
Ambient gas | O2 | O2 + H2O |
Partial pressure of ambient gas [Pa] | 100 | |
Deposition time [h] | 1 | 5 |
Thickness [μm] | 1.5 | 6.5 |
Used target | Ba metala | CellyardÒb |