Parameters

Experimental results

Voltage buffer

Analog inverter

WTA

CMOS

FGMOS

CMOS

FGMOS

CMOS

FGMOS

Process technology

180 nm

180 nm

180 nm

180 nm

180 nm

180 nm

V_DD & V_SS

±1.25 V

±1.25 V

±1.45 V

±1.25 V

±1.25 V

±1.25 V

Linearity range

−1.25 V to 1 V

−1.25 V to 1.25 V

0 to 0.9 V

0 to 1 V

-

-

Gain

0.9670

0.9962

−0.9653

−1.005

-

-

Power dissipation (mW)

0.500

0.500

13

1.900

1.450

0.429

Input resistance (Ω)

10²⁰

2 × 10¹¹

10²⁰

2 × 10¹¹

10²⁰

2 × 10¹¹

Output resistance (kΩ)

1.584

0.193

0.259

3.436

0.097

1.696