Parameters (absorber layers) | CsSnCl3 |
Thickness (nm) | 800 |
Band gap, Eg (eV) | 1.52 |
Electron affinity, X (eV) | 3.90 |
Dielectric permittivity (relative), εr | 29.4 |
CB effective density of states, NC (1/cm3) | 1 × 1019 |
VB effective density of states, NV (1/cm3) | 1 × 1019 |
Electron mobility, µn (cm2/Vs) | 2 |
Hole mobility, µh (cm2/Vs) | 2 |
Shallow uniform acceptor density, NA (1/cm3) | 1 × 1015 |
Shallow uniform donor density, ND (1/cm3) | 0 |
Defect density, Nt (1/cm3) | 1 × 1015 |