| GaN buried-gate front illuminated OPFET with Au gate (vgs = 0 V, Vds = 10 V, λ = 350 nm) [12] | |||||||||
| Photon Flux Density (/m2-s) | Photovoltage (V) | Responsivity (A/W) | Photocurrent Gain | EQE (%) | Sensitivity (%) | Switching time (s) | Bandwidth (Hz) | Detectivity (cmHz1/2W−1) | fT (Hz) |
| 0 | 0 | - | - | - | - | 67 ps | - | - | 7.37 GHz |
| 1016 | 0.346 V | 1.1 × 109 | 2 × 1010 | 3.8 × 1011 | 15.06 | 53.6 ps | 10.1 GHz | 7.73 × 1016 | 6.1 GHz |
| 1019 | 0.525 V | 1.6 × 106 | 3.1 × 107 | 5.8 × 108 | 7.13 | 48 ps | 33.4 GHz | 1.17 × 1014 | 5.8 GHz |
| 1022 | 0.7 V | 3.69 × 103 | 6.92 × 104 | 1.31 × 106 | 20.85 | 34 ps | 4.87 MHz | 2.6 × 1011 | 11.8 GHz |
| GaN buried-gate back illuminated OPFET with Au gate (vgs = 0 V, Vds = 10 V, λ = 350 nm) [12] | |||||||||
| Photon Flux Density (/m2-s) | Photovoltage (V) | Responsivity (A/W) | Photocurrent Gain | EQE (%) | Sensitivity (%) | Switching time (s) | Bandwidth (Hz) | Detectivity (cmHz1/2W−1) | fT (Hz) |
| 0 | 0 | - | - | - | - | 67 ps | - | - | 7.37 GHz |
| 1016 | 0.2 V | 5.6 × 108 | 1.06 × 1010 | 2 × 1011 | 8.7 | 60 ps | 16.34 GHz | 3.95 × 1016 | 7.25 GHz |
| 1019 | 0.38 V | 1.2 × 106 | 2.2 × 107 | 4.2 × 108 | 8.63 | 54 ps | 28.5 GHz | 8.2 × 1013 | 7.1 GHz |
| 1022 | 0.56 V | 1.57 × 104 | 2.94 × 105 | 5.56 × 106 | 67.1 | 4 ps | 0.846 MHz | 9.97 × 1011 | 16.2 GHz |
| GaN front illuminated OPFET with Au gate (vgs = 0 V, Vds = 10 V, λ = 350 nm) [1] | |||||||||
| Photon Flux Density (/m2-s) | Photovoltage (V) | Responsivity (A/W) | Photocurrent Gain | EQE (%) | Sensitivity (%) | Switching time (s) | Bandwidth (Hz) | Detectivity (cmHz1/2W−1) | fT (Hz) |
| 0 | 0 | - | - | - | - | 1.25 ns | - | - | 5.2 GHz |
| 1016 | 0.2696 V | 2.9 × 108 | 1.916×109 | 1.0 × 1011 | 62.31 | 0.45 ns | 5.8 GHz | 6.57 × 1016 | 6.2 GHz |
| 1019 | 0.4483 V | 5.8 × 105 | 3.9×106 | 2.1 × 108 | 38.66 | 0.268 ns | 12.87 GHz | 1.17 × 1014 | 6.7 GHz |
| 1022 | 0.6271 V | 4.42 × 103 | 2.9×104 | 1.57 × 106 | 83.5 | 38 ps | 0.78 MHz | 7.55 × 1011 | 4.95 GHz |
| GaN generalized model of OPFET with Au gate (vgs = 0 V, Vds = 10 V, λ = 350 nm) [1] | |||||||||
| Photon Flux Density (/m2-s) | Photovoltage (V) | Responsivity (A/W) | Photocurrent Gain | EQE (%) | Sensitivity (%) | Switching time (s) | Bandwidth (Hz) | Detectivity (cmHz1/2W−1) | fT (Hz) |
| 0 | 0 | - | - | - | - | 1.25 ns | - | - | 5.2 GHz |
| 1016 | 0.65 V | 5.25 × 108 | 6.94 × 109 | 3.7 × 1011 | 85.7 | 0.16 ns | 2.836 GHz | 9.145 × 1016 | 7.6 GHz |
| 1019 | 1.2 V | 1.29 × 106 | 1.71 × 107 | 9.2 × 108 | 55.67 | 58 ps | 10.97 GHz | 1.78 × 1014 | 7.76 GHz |
| 1022 | 1.724 V | 2.91 × 103 | 3.85 × 104 | 2.07 × 106 | 53.94 | 22 ps | 3.27 MHz | 3.9 × 1011 | 74.4 MHz |
| GaN generalized model of OPFET with ITO gate (vgs = 0 V, Vds = 10 V, λ = 350 nm) [This work] | |||||||||
| Photon Flux Density (/m2-s) | Photovoltage (V) | Responsivity (A/W) | Photocurrent Gain | EQE (%) | Sensitivity (%) | Switching time (s) | Bandwidth (Hz) | Detectivity (cmHz1/2W−1) | fT (Hz) |
| 0 | 0 | - | - | - | - | 1.91 ns | - | - | 5.4 GHz |
| 1016 | 0.91 V | 1.66 × 109 | 1.2 × 1010 | 5.9 × 1011 | 94 | 91 ps | 2.836 GHz | 2.4 × 1017 | 6.9 GHz |
| 1019 | 1.44 V | 2.71 × 106 | 2 × 107 | 9.6 × 108 | 37.4 | 49 ps | 19.15 GHz | 3.77 × 1014 | 8.8 GHz |
| 1022 | 1.98 V | 5.33 × 103 | 3.87 × 104 | 1.89 × 106 | 48 | 21 ps | 0.45 GHz | 7.23 × 1011 | 86 MHz |
| SiC generalized model of OPFET with Au gate (vgs = 0 V, Vds = 10 V, λ = 350 nm) [This work] | |||||||||
| Photon Flux Density (/m2-s) | Photovoltage (V) | Responsivity (A/W) | Photocurrent Gain | EQE (%) | Sensitivity (%) | Switching time (s) | Bandwidth (Hz) | Detectivity (cmHz1/2W−1) | fT (Hz) |
| 0 | 0 | - | - | - | - | 4 ns | - | - | 0 GHz |
| 1016 | 2.22 V | 1.56 × 109 | 6.21 × 1010 | 5.5 × 1011 | 96.8 | 79 ps | 11.88 GHz | 3.4 × 1017 | 4.6 GHz |
| 1019 | 2.76 V | 2 × 106 | 7.8 × 107 | 6.9 × 108 | 19.7 | 57 ps | 36.2 GHz | 4.2 × 1014 | 8.7 GHz |
| 1022 | 3.3 V | 2.35 × 103 | 9.35 × 104 | 8.3 × 105 | 16.3 | 43 ps | 364 GHz | 5 × 1011 | 5.7 GHz |