Gate Length Lgate (nm) | Oxide Thickness tOX (nm) | Source/Drain Length LS/D = Lgate (nm) | Silicon Layer Thickness tsi = 0.4Lgate (nm) | BOX Thickness tBOX (nm) | Source/Drain Doping Concentration ND (m−3) | Channel Doping Concentration NA (m−3) |
25 | 2 | 25 | 10 | 50 | 1 × 1021 | 3 × 1018 |
60 | 2 | 60 | 24 | 80 | 1 × 1020 | 1 × 1018 |
80 | 2 | 80 | 32 | 100 | 1 × 1020 | 1 × 1018 |
100 | 2 | 100 | 40 | 140 | 1 × 1019 | 1 × 1018 |