| Author | Reduction Method | Metal substrate | Reducing, stabilizing, functionalizing agents and solvent | Power (W) [D%] | Process Time (s) | Morphology |
| Chen (2008) [36] | One-pot TCMC-102 Rated 1 kW | AgNO3 | CMS, reducing and stabilizing agent H2O, solvent | 400 [100] | >3600 | Spherical ~15 nm |
| Bahadur (2011) [37] ** | Second step Skikoku Keisoku SMW-604 reflux Rated 500 W | AgNP Colloid Spherical 17 nm | TEOS, Si precursor C2H6OH, solvent | 500 50oC | 120 | Ag@SiO2 Spherical 20 to 25 nm |
| Karimipour (2015) [38] | One-pot Shikoku Keisoku SMW-064 reflux Rated 1 kW | AgNO3 | DMF, reducing OA, surfactant H2O, solvent | 540 [100] | 30 | Spherical 10 to 20 nm |
| Ebrahimi (2016) [39] | One-pot Shikoku Keisoku SMW-064 reflux Rated 1 kW | AgNO3 | PVP, stabilizing and capping C2H6OH, solvent | 360 [100] | 60 | Ag@TiO2 Spherical ~20 nm |
| Karimipour (2016) [40] | First step Shikoku Keisoku SMW-064 reflux Rated 1 kW | AgNO3 | PVP, capping and stabilizing C2H6OH, solvent | 360 [100] | 60 | Spherical ~15 nm |
| Karimipour (2016) [40] | Second step Shikoku Keisoku SMW-064 reflux Rated 1 kW | PVP-capped AgNP ~15 nm | Si(OC2H5)4, silica shell APTES, capping and functionalizing C2H6OH, solvent | 360 [100] | 600 | Ag@SiO2 Spherical ~15 nm |