| Process parameter | Process stage | ||||
| Substrate etching with Zr+ ions | Zr coating deposition | Cooling the substrate | Zr-DLC coating deposition | ||
| Pressure in the chamber pk [mbar] | <1 × 10−3 | 5 × 10−3 | 1 × 10−5 | 7.4 × 10−4 | |
| Working gas flow pAr [ml/min], | pC2H2 | - | - | - | 45 |
| pAr | 50 | 160 | - | - | |
| Substrate polarization voltage UBIAS [V] | −750 ÷ −1000 (increments of 50 V) | −50 | - | −100 | |
| Amperage of the source current IZ [A] | 90 | 90 | - | 90 | |
| Amperage of the separator ISEP [A] | 90 | 90 | - | 90 | |
| Temperature T [℃] | - | 250 | <220 | 300 | |
| Time t [min] | 6 | 30 | - | 90 | |