Pressure [mbar]

Beam current

IW [A]

Temperature

T [˚C]

Time of deposition

t [min.]

Arc source current

IW [A]

Substrate polarization voltage

UBIAS [V]

Ti ion etching

9 × 10−4

-

325

10

60

-100

W coating deposition

5 × 10−5

0.15

200

45

-

-