Sample

Substrate temperature,

Ts (K)

Current density,

j

(MA/cm2)

Current stressing time

(s)

Formed Structure

Diameter of sphere

(μm)

S1

623

8.33

1860

Microsphere

6.54

S2

623

8.33

1920

Microsphere goes outside

7.48

S3

623

8.33

1320

Microsphere

7.46

S4

623

8.33

1620

Microsphere goes outside

8.41