Hall mobility (µ) (cm²/V∙s)

Carrier concentration

(1019 cm⁻³)

Resistivity (r) (10⁻³ Ω∙cm)

Sheet resistance

(´10⁴ W/š)

Doping efficiency^a (%)

at.% In

As-deposited

Annealed

As-deposited

Annealed

As-deposited

Annealed

As-deposited

Annealed

As-deposited

Annealed

0

0.6

5.2

0.5

0.8

2100

149

6.69

0.74

….

….

0.6

1.1

10.5

0.3

9.6

1806

6.2

6.79

0.03

1.2

38.1

0.8

1.3

11.3

0.3

8.5

8.5

6.5

6.30

0.03

0.9

25.3

1

0.1

11.0

4.1

12.0

12.0

4.7

6.45

0.02

9.8

28.6

1.4

0.1

9.3

2.3

10.7

10.7

6.3

7.16

0.03

3.9

18.2

2

0.1

7.6

2.9

11.2

11.2

7.4

5.82

0.03

3.45

13.3

3

0.1

6.9

3.0

17.0

17.0

5.3

5.97

0.03

2.4

13.5