Device

Current (mA)

R_a

T_c (K)

CIE (x, y)

R₉

Luminous efficiency (lm・W⁻¹)

GaN Chip

20

0

25000

(0.1499, 0.0330)

−207

20.88

GaN Chip + YAG:Ce³⁺

20

70.4

5190

(0.3421, 0.3831)

−47

120.07

GaN Chip + K₃MoO₂F₅・2H₂O:Mn⁴⁺

20

0

25000

(0.2873, 0.0041)

−595

7.83

GaN Chip + YAG:Ce³⁺ + K₃MoO₂F₅・2H₂O:Mn⁴⁺

20

90.1

3608

(0.3738, 0.3148)

79

50.17